tm january 2009 FDA032N08 n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDA032N08 rev. a www.fairchildsemi.com 1 FDA032N08 n-channel powertrench ? mosfet 75v, 235a, 3.2m features ?r ds(on) = 2.5m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench te chnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s adcanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d g s gs d to-3pn mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDA032N08 units v dss drain to source voltage 75 v v gss gate to source voltage 20 v i d d r a i n c u r r e n t -continuous (t c = 25 o c, silicon limited) 235* a -continuous (t c = 100 o c, silicon limited) 165* -continuous (t c = 25 o c, package limited) 120 i dm d r a i n c u r r e n t - p u l s e d (note 1) 940 a e as single pulsed avalanche energy (note 2) 1995 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25 o c) 375 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.4 o c/w r cs thermal resistance, case to sink typ. 0.24 r ja thermal resistance, junction to ambient 40 *calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a.
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDA032N08 FDA032N08 to-3pn - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c75 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.05 - v/ o c i dss zero gate voltage drain current v ds = 75v, v gs = 0v - - 1 a v ds = 75v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 2.5 3.2 m g fs forward transconductance v ds = 20v, i d = 75a (note 4) - 180 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 11400 15160 pf c oss output capacitance - 1360 1810 pf c rss reverse transfer capacitance - 595 800 pf q g(tot) total gate charge at 10v v ds = 60v, i d = 75a v gs = 10v (note 4, 5) - 169 220 nc q gs gate to source gate charge - 60 - nc q gd gate to drain ?miller? charge - 47 - nc t d(on) turn-on delay time v dd = 37.5v, i d = 75a r gen = 25 , v gs = 10v (note 4, 5) - 230 470 ns t r turn-on rise time - 191 392 ns t d(off) turn-off delay time - 335 680 ns t f turn-off fall time - 121 252 ns i s maximum continuous drain to source diode forward current - - 235 a i sm maximum pulsed drain to source diode forward current - - 940 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ s (note 4) -53-ns q rr reverse recovery charge - 77 - nc notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 0.71mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 0.1 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d ,drain current[a] v ds ,drain-source voltage[v] 3000 2468 1 10 100 -55 o c 175 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 500 0.0 0.5 1.0 1.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 400 0 100 200 300 400 0.0020 0.0025 0.0030 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0 50 100 150 200 0 2 4 6 8 10 *note: i d = 75a v ds = 15v v ds = 37.5v v ds = 60v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 80
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current v s . c a s e t e m p e r a t u r e figure 11 . transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 50 100 150 200 250 i d , drain current [a] t c , case temperature [ o c ] limited by package 1 10 100 0.01 0.1 1 10 100 1000 3000 100 s 10 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.005 0.01 0.1 0.5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 7 mechanical dimensions to-3pn dimensions in millimeters
FDA032N08 n-channel powertrench ? mosfet FDA032N08 rev. a www.fairchildsemi.com 8 rev. i37 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporatio n, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? 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